| PART |
Description |
Maker |
| MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FMPA2151 |
2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
|
Fairchild Semiconductor
|
| RFHA3832 |
10W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| EIC5359-10 |
5.30-5.90 GHz 10W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| PH1516-10 |
Wireless Bipolar Power Transistor, 10W 1.45 - 1.60 GHz
|
Tyco Electronics
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MA08509D |
10W Power Amplifier Die Preliminary Release 8.0-11 GHz
|
MACOM[Tyco Electronics]
|
| SA5204AD SA5204AN NE5204 NE5204A NE5204AD NE5204AN |
RES 110 OHM 1/10W .5% 0805 SMD 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Wide-band high-frequency amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MGFC40V4450A C404450A |
From old datasheet system
4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LQP03TN4N7H04 LQP03TN5N1H04 AN26024A GRM33B30J104K |
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
|
Panasonic Battery Group
|
